ANALYSIS OF EFFECTIVE CAPACITANCE OF ONE-PORT S-BAND GaN HEMT NONFOSTER NEGATIVE-REACTANCE CIRCUIT
This paper presents an analysis of the effective capacitance of one-port S-band gallium nitride high electron mobility transistor (GaN HEMT) non-Foster negative-reactance circuit. The analysis was carried out at Sband frequency ranges of 4.08 GHz to 4.11 GHz and 4.13 GHz to 4.17 GHz. The chosen frequency ranges are c…