This paper presents 24 to 28 GHz MMIC (monolithic microwave integrated circuit) class-J GaAs pHEMT power amplifier with non-Foster matching for 5G communication systems. The power amplifier (PA) was designed with Keysight Advanced Design System (ADS) Software based on WIN semiconductor P10-10 GaAs pHEMT process tech…
This paper proposes C-band non-Foster enhanced high power (17.8 W) class-J GaN HEMT (gallium nitride high electron mobility transistor) amplifier. The negative capacitance generated by the non-Foster circuit (NFC) in the input matching network of Class-J power amplifier (PA) enhances the PA performance by cancelling …
This paper proposes high power high efficiency Class-J GaN HEMT amplifier with non-Foster network. NonFoster network forms part of the input matching network of the power amplifier (PA) and cancels out the power transistor input parasitic capacitance thereby enhancing output power, power added efficiency, drain effici…