International Journal of Innovative Engineering, Technology & Science

C-band Non-Foster Enhanced High Power (17.8 W) Class-J GaN HEMT Amplifier
Share:

C-band Non-Foster Enhanced High Power (17.8 W) Class-J GaN HEMT Amplifier

Publication Date : 22/03/2021


Author(s) :

Charles Nwakanma Akwuruoha, Chibuisi Iroegbu, Zhirun Hu.


Volume/Issue :
Volume 4
,
Issue 1
(03 - 2021)



Abstract :

This paper proposes C-band non-Foster enhanced high power (17.8 W) class-J GaN HEMT (gallium nitride high electron mobility transistor) amplifier. The negative capacitance generated by the non-Foster circuit (NFC) in the input matching network of Class-J power amplifier (PA) enhances the PA performance by cancelling the power transistor input parasitic capacitance (gate-source capacitance). The PA was designed based on Cree’s CGHV40030FP GaN HEMT biased with drain supply voltage of 40 V at quiescent drain-to-source current (I DSq ) of 35 mA. The NFC contains two GaN HEMTs biased with drain supply voltage of 20 V at I DSq of 19 mA. The PA operates from 4.15 to 4.55 GHz. The NFC negative capacitance at 4.35GHz center frequency stood at -0.96 pF. The Class-J PA with NFC demonstrates better performance than the PA without NFC with output power of 42.5 dBm (17.8 W), 45.4% drain efficiency, 42% power added efficiency (PAE) and transducer power gain of 10.5 dB.


No. of Downloads :

4


Please note

This is a widgetized sidebar area and you can place any widget here, as you would with the classic WordPress sidebar.