International Journal of Innovative Engineering, Technology & Science

High Power High Efficiency Class-J GaN HEMT Amplifier with Non-Foster Network
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High Power High Efficiency Class-J GaN HEMT Amplifier with Non-Foster Network

Publication Date : 22/03/2021


Author(s) :

Charles Nwakanma Akwuruoha, Agwu Ogbonnaya Ekwe, Zhirun Hu.


Volume/Issue :
Volume 4
,
Issue 1
(03 - 2021)



Abstract :

This paper proposes high power high efficiency Class-J GaN HEMT amplifier with non-Foster network. NonFoster network forms part of the input matching network of the power amplifier (PA) and cancels out the power transistor input parasitic capacitance thereby enhancing output power, power added efficiency, drain efficiency and transducer power gain. The PA design was based on Cree’s CGHV40030FP GaN HEMT biased with drain supply voltage of 50 V at quiescent drain-to-source current (I DSq ) of 15 mA. The two GaN HEMTs in the nonFoster network were each biased with drain supply voltage of 20 V at IDSq of 3 mA. The PA operates from 2.0 to 2.2 GHz. The non-Foster negative capacitance at 2.1GHz center frequency stood at -2.4 pF. The power amplifier has output power of 43.9 dBm (24.5 W), 69.3% drain efficiency, 66.4% power added efficiency (PAE) and transducer power gain of 11.9 dB.


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