24 to 28 GHz MMIC CLASS-J GaAs pHEMT POWER AMPLIFIER WITH NON-FOSTER MATCHING FOR 5G COMMUNICATION SYSTEMS
Engineering
Charles Nwakanma Akwuruoha
Non-Foster, 5G, Negative capacitance, Wideband, Power amplifier.
This paper presents 24 to 28 GHz MMIC (monolithic microwave integrated circuit) class-J GaAs pHEMT power amplifier with non-Foster matching for 5G communication systems. The power amplifier (PA) was designed with Keysight Advanced Design System (ADS) Software based on WIN semiconductor P10-10 GaAs pHEMT process technology with periphery of 150 μm and biased with drain supply voltage of 3 V at quiescent drain-to-source current of 3 mA. The transistors in the non-Foster circuit (NFC) were biased with drain supply voltage of 2 V with quiescent drain-to- source current of 2 mA. This puts the PA to NFC drain supply voltage scaling ratio at 1.5:1. The NFC produces the effective negative capacitance required to cancel out the power transistor input parasitic capacitance across the bandwidth in order to enhance PA efficiency, output power and gain. The PA has 4 GHz bandwidth as it operates from 24 to 28 GHz with center frequency of 26 GHz covering the proposed higher 5G frequency band of 24.5 to 27.5 GHz. Simulation results indicate that the PA with NFC has 36% drain efficiency, 26% power added efficiency (PAE), 16.2 dBm output power and transducer power gain of 5.2 dB at centre frequency of 26 GHz while the PA without NFC has 34% drain efficiency, 25% PAE, 15.6 dBm and transducer power gain of 4.6 dB at centre frequency of 26 GHz. The results indicate that the performance of the PA with NFC in terms of drain efficiency, power added efficiency, output power and transducer power gain from 24 to 28 GHz at centre frequency of 26 GHz increased by 2%, 1%, 0.6dBm and 0.6 dB respectively. This makes the PA suitable for application at higher 5G frequency band.
Nigeria
72-78