C-band Non-Foster Enhanced High Power (17.8 W) Class-J GaN HEMT Amplifier
This paper proposes C-band non-Foster enhanced high power (17.8 W) class-J GaN HEMT (gallium nitride high electron mobility transistor) amplifier. The negative capacitance generated by the non-Foster circuit (NFC) in the input matching network of Class-J power amplifier (PA) enhances the PA performance by cancelling …