This paper proposes C-band non-Foster enhanced high power (17.8 W) class-J GaN HEMT (gallium nitride high
electron mobility transistor) amplifier. The negative capacitance generated by the non-Foster circuit (NFC) in the
input matching network of Class-J power amplifier (PA) enhances the PA performance by cancelling the power
transistor input parasitic capacitance (gate-source capacitance). The PA was designed based on Cree’s
CGHV40030FP GaN HEMT biased with drain supply voltage of 40 V at quiescent drain-to-source current (IDSq) of 35
mA. The NFC contains two GaN HEMTs biased with drain supply voltage of 20 V at IDSq of 19 mA. The PA operates
from 4.15 to 4.55 GHz. The NFC negative capacitance at 4.35GHz center frequency stood at -0.96 pF. The Class-J PA
with NFC demonstrates better performance than the PA without NFC with output power of 42.5 dBm (17.8 W), 45.4%
drain efficiency, 42% power added efficiency (PAE) and transducer power gain of 10.5 dB.
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