High Power High Efficiency Class-J GaN HEMT Amplifier with Non-Foster Network

Charles Nwakanma Akwuruoha; Agwu Ogbonnaya Ekwe; Zhirun Hu

Authors & affiliations

Charles Nwakanma Akwuruoha

Department of Electrical/Electronic Engineering, Michael Okpara University of Agriculture Umudike, Nigeria.

Agwu Ogbonnaya Ekwe

Department of Electrical/Electronic Engineering, Michael Okpara University of Agriculture Umudike, Nigeria.

Zhirun Hu

School of Electrical and Electronic Engineering, The University of Manchester, United Kingdom

Abstract

Summary

This paper proposes high power high efficiency Class-J GaN HEMT amplifier with non-Foster network. NonFoster network forms part of the input matching network of the power amplifier (PA) and cancels out the power
transistor input parasitic capacitance thereby enhancing output power, power added efficiency, drain efficiency
and transducer power gain. The PA design was based on Cree’s CGHV40030FP GaN HEMT biased with drain
supply voltage of 50 V at quiescent drain-to-source current (IDSq) of 15 mA. The two GaN HEMTs in the nonFoster network were each biased with drain supply voltage of 20 V at IDSq of 3 mA. The PA operates from 2.0 to
2.2 GHz. The non-Foster negative capacitance at 2.1GHz center frequency stood at -2.4 pF. The power amplifier
has output power of 43.9 dBm (24.5 W), 69.3% drain efficiency, 66.4% power added efficiency (PAE) and
transducer power gain of 11.9 dB.

Keywords

Index Terms

Class-J GaN HEMT Negative Capacitance Non-Foster Network Power Amplifier Power Transistor

Citation & details

How to cite this article

Authors: Charles Nwakanma Akwuruoha, Agwu Ogbonnaya Ekwe, Zhirun Hu

Volume/Issue: Volume 4, Issue 1

Pages: 1-6

Published: February 28, 2021

Affiliations: Department of Electrical/Electronic Engineering, Michael Okpara University of Agriculture Umudike, Nigeria., School of Electrical and Electronic Engineering, The University of Manchester, United Kingdom

Charles Nwakanma Akwuruoha, Agwu Ogbonnaya Ekwe, Zhirun Hu (2021). High Power High Efficiency Class-J GaN HEMT Amplifier with Non-Foster Network. International Journal of Innovative Engineering, Technology & Science (IJIETS), Volume 4, Issue 1, 1-6.

Charles Nwakanma Akwuruoha, Agwu Ogbonnaya Ekwe, Zhirun Hu. "High Power High Efficiency Class-J GaN HEMT Amplifier with Non-Foster Network." International Journal of Innovative Engineering, Technology & Science (IJIETS), vol. Volume 4, Issue 1, 2021, pp. 1-6.

Charles Nwakanma Akwuruoha, Agwu Ogbonnaya Ekwe, Zhirun Hu. "High Power High Efficiency Class-J GaN HEMT Amplifier with Non-Foster Network." International Journal of Innovative Engineering, Technology & Science (IJIETS) Volume 4, Issue 1 (2021): 1-6.

@article{highpowerhighefficiencyclassjganhemtamplifierwithnonfosternetwork2021, author = {Charles Nwakanma Akwuruoha and Agwu Ogbonnaya Ekwe and Zhirun Hu}, title = {High Power High Efficiency Class-J GaN HEMT Amplifier with Non-Foster Network}, journal = {International Journal of Innovative Engineering, Technology & Science (IJIETS)}, year = {2021}, volume = {Volume 4, Issue 1}, pages = {1-6} }

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Published: February 28, 2021
Volume/Issue: Volume 4, Issue 1
Pages: 1-6

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