Summary
This paper presents a 900 MHz to 1.5 GHz Single-ended CMOS Mixer for wireless communications systems. The Mixer was designed with Keysight Advanced Design System (ADS) Software based on BSIM_3 model nMOS and pMOS field effect transistors biased with drain supply voltage of 3V and gate voltage 0V. The Mixer was simulated for down-conversion and up-conversion. Harmonic Balance simulation was carried and the drain resistance (RD) of the Mixer was the parameter swept from 10 to 820 ohms. In the down-conversion, the radio frequency (RF) is the input port while the intermediate frequency (IF) is the output port. In the up-conversion, the IF is the input port while the RF is the output port. The RF frequency was swept from 900 MHz to 1.5 GHz. A Local oscillator (LO) to intermediate frequency (IF) isolation of 52.02 dB, an LO to RF isolation of 68.83 dB and RF to IF isolation of 16.57 dB were recorded at drain resistance of 410 Ω. Since the Mixer operational frequency ranges from 900 MHz to 1.5 GHz, the center frequency is 1.2 GHz. The results obtained at 1.2 GHz, indicates that the low and high third order intercept points are -8.54 dBm and 10.59 dBm respectively as well as transducer power gain of -25.63 dB. The lower sideband (LSB) and upper sideband (USB) IF power at 1.2 GHz are -55.63 dBm and -55.64 dBm respectively. The third order intermodulation power for LSB and USB at 1.2 GHz are -98.56 dBm and -136.86 dBm respectively.
Index Terms
cmos mixer single-ended radio frequency local oscillator intermediate frequencyHow to cite this article
- Published: September 25, 2026
- Volume/Issue: Volume 10, Issue 2
- Pages: 135-147
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