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Zhirun Hu

Publications in IJIETS: 2

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C-band Non-Foster Enhanced High Power (17.8 W) Class-J GaN HEMT Amplifier

Vol/Issue: Volume 4, Issue 1 • Pages: 1-6 • Published: 28 Feb 2021

This paper proposes C-band non-Foster enhanced high power (17.8 W) class-J GaN HEMT (gallium nitride high electron mobility transistor) amplifier. The negative capacitance generated by the non-Foster circuit (NFC) in the input matching network of Class-J power amplifier (PA) enhances the PA performance by cancelling …

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High Power High Efficiency Class-J GaN HEMT Amplifier with Non-Foster Network

Vol/Issue: Volume 4, Issue 1 • Pages: 1-6 • Published: 28 Feb 2021

This paper proposes high power high efficiency Class-J GaN HEMT amplifier with non-Foster network. NonFoster network forms part of the input matching network of the power amplifier (PA) and cancels out the power transistor input parasitic capacitance thereby enhancing output power, power added efficiency, drain effici…

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