INVESTIGATION OF THE CUT-OFF FREQUENCY OF 500µm MMIC GAN HEMT DEVICE AT 10V, 16V AND 20V DRAIN VOLTAGES FROM 1-25 GHz

Summary

This paper presents an investigation of the cut-off frequency of 500 µm (4 x 125 µm) monolithic microwave
integrated circuit (MMIC) gallium nitride high electron mobility transistor (GaN HEMT) device at 10V, 16V
and 20V drain voltages from 1 to 25 GHz. The GaN HEMT device was fabricated by WIN Semiconductor
using NP25-00 0.25 µm GaN HEMT process. S-parameter measurement was carried out with vector network
analyzer (VNA) while the simulation was carried out with Keysight advanced design system software (ADS)
from 1 to 25 GHz at gate voltage of -2V and drain supply voltages of 10V, 16V and 20V respectively. The
measured and simulated results were compared at 5 GHz. The S-parameter results were used to compute the
transistor current gain and determine the cut-off frequency of the MMIC GaN HEMT device. The cut-off
frequency of the measured MMIC GaN HEMT device from 1 to 25 GHz and drain supply voltages of 10V,
16V and 20V respectively stood at 19 GHz, 23 GHz and 23.9 GHz whereas the cut-off frequency of the
simulated MMIC GaN HEMT device stood at 20 GHz, 18 GHz and 17.6 GHz.

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