Summary
This paper proposes a high efficiency Doherty Power Amplifier for 5G wireless communication systems. The
power amplifier (PA) was designed based on WIN NP2500 GaN HEMT biased with drain supply voltage of
28 V at quiescent drain-to-source (IDSq) of 13mA for the main transistor and 3mA for the auxiliary transistor
respectively. The PA operates from 800 to 900 MHz. At 850 MHz center frequency, the PA has 69.1% power
added efficiency (PAE), 35 dBm output power and 9 dB transducer power gain at 26 dBm input power. The
small signal gain, input return loss and output return loss at 850 MHz stand at 12.4 dB, -7.6 dB and -7 dB
respectively.
Index Terms
Asymmetric Doherty power amplifier main GaN HEMT couplerHow to cite this article
- Published: July 31, 2023
- Volume/Issue: Volume 7, Issue 1
- Pages: 1-7
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